Process and Reliability of SF6/O2 Plasma Etched Copper TSVs
نویسندگان
چکیده
The formation of a TSV for three-dimensional interconnects using SF6/O2 plasma is explored. Adjusting the O2 gas concentration to 45 sccm, while the SF6 concentration is set to 35 sccm, produced the best combination of chemical and physical etching to provide sidewall angles of 88◦. Three TSV aspect ratios are etched (5/58, 10/100, and 20/100 μm) and subsequently analyzed using the finite element method. The TSVs’ series resistance, current density, thermo-mechanical stress, and electromigration induced stress after 300 hours of operation at a 2MA/cm current density are analyzed. An additional comparison to ideal TSVs with sidewall angles at 90◦ is performed.
منابع مشابه
Process and Performance of Copper TSVs
The difference between the performance of TSVs manufactured using SF6/O2 plasma etching or a Bosch process is explored through simulations. The geometric ratio of the sample TSV is approximately 5μm:58μm. The electrical performance of the devices is explored through capacitance and resistance extraction, while the reliability is analyzed using thermo-mechanical and electromigration simulations ...
متن کاملInactivation of Gram-Negative Bacteria by Low-Pressure RF Remote Plasma Excited in N2-O2 Mixture and SF6 Gases
The role of low-pressure RF plasma in the inactivation of Escherichia coli O157, Klebsiella pneumoniae, Proteus mirabilis, and Enterobacter sakazakii using N2-O2 and SF6 gases was assessed. 1×109 colony-forming units (CFUs) of each bacterial isolate were placed on three polymer foils. The effects of pressure, power, distance from the source, and exposure time to plasma gases were optimized. The...
متن کاملComparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas
In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of et...
متن کاملMorphological, structural and photoresponse characterization of ZnO nanostructure films deposited on plasma etched silicon substrates
ZnO nanostructure films were deposited by radio frequency (RF) magnetron sputtering on etched silicon (100) substrates using dry Ar/SF6 plasma, at two etching times of 5 min and 30 min, and on non etched silicon surface. Energy dispersive X-ray (EDX) technique was employed to investigate the elements contents for etched substrates as well as ZnO films, where it is found to be stoichiometric. Su...
متن کاملEtch Rates for Micromachining Processing—Part II
Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping levels, polycrystalline germanium, polycrystalline SiGe, graphite, fused quartz, Pyrex 7740, nine other preparations of silicon dioxide, four preparat...
متن کامل